【国外通信教程】Broadband Amplifiers for High Data Rates - 通信人家园

Contents
Kurzfassung1
Abstract 2
1Introduction3
1.1Motivation....................................3
1.1.1ScopeoftheWork...........................5
1.2StateoftheArt.................................6
1.2.1BroadbandAmpliﬁers.........................6
1.2.2Devices.................................7
2InP-basedDoubleHeterojunctionBipolarTransistor11
2.1OperatingPrinciple...............................12
2.2Technology...................................16
2.2.1ActiveDevices.............................16
2.2.2PassiveStructures...........................18
2.3LayerStructureOptimization.........................19
2.3.1InitialLayerStructure(A).......................19
2.3.2ImprovedLayerStructure(B).....................24
2.3.3OptimizedLayerStructure(C)....................28
2.3.4Summary................................33
2.4TransistorLayoutOptimization........................34
2.4.1EmitterWidthDesign.........................36
2.4.2BaseContactWidthDesign......................38
2.4.3CollectorContactDesign........................40
2.4.4EmitterLengthDesign.........................40
2.4.5Summary................................43
3TransistorModels45
3.1Large-SignalModels..............................46
3.1.1Gummel-PoonModel..........................46
3.1.2AlternativeModels...........................47
3.1.3UCSDModel..............................47

3.2UCSDModelExtraction............................49
3.2.1DiodeParameters............................49
3.2.2Resistances...............................51
3.2.3JunctionCapacitances.........................55
3.2.4TransitandDelayTimes........................56
3.3Small-SignalModel...............................60
3.3.1ModelExtraction............................60
3.3.2InvestigationofTransistors.......................63
3.4Summary....................................68
4MethodsofBroadbandAmpliﬁerCharacterization69
4.1FiguresofMerit.................................69
4.1.1Bandwidth................................69
4.1.2GroupDelay...............................71
4.1.3OutputPower..............................71
4.2Small-Signal-Characterization(S-Parameter).................72
4.3Large-Signal-Characterization.........................73
4.3.1OutputPower..............................73
4.3.2SignalDistortion(Eye-Diagram)....................74
5RealizationofCompactLumpedAmpliﬁers77
5.1DesignConsiderations.............................77
5.2RealizedAmpliﬁers...............................79
5.2.1ComparisonofLumpedAmpliﬁerApproaches............79
5.2.2High-GainAmpliﬁerfor40Gbit/s...................82
5.2.3Low-PowerAmpliﬁerfor80Gbit/s..................85
5.3OutputPowerLimit..............................87
6DistributedAmpliﬁersfor80Gbit/s91
6.1DesignConsiderations.............................92
6.1.1GainCellDesignConcepts.......................93
6.1.2AttenuationCompensation.......................93
6.1.3CoplanarandMicrostripTransmissionLines.............96
6.1.4TransmissionLineTermination....................97
6.1.5LinearandMatrixDesign.......................98
6.1.6Single-endedandDiﬀerentialDesign.................98
6.2RealizedAmpliﬁers...............................99
6.2.1Low-Power100GHzBandwidthAmpliﬁer..............99
6.2.2TunableAmpliﬁerforLossCompensation..............103
6.2.3High-PowerAmpliﬁerfor80Gbit/s..................108
6.3Summary....................................114